منابع مشابه
Dissipative Effect and Tunneling Time
The quantum Langevin equation has been studied for dissipative system using the approach of Ford et al. Here, we have considered the inverted harmonic oscillator potential and calculated the effect of dissipation on tunneling time, group delay, and the self-interference term. A critical value of the friction coefficient has been determined for which the self-interference term vanishes. This app...
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Investigations of Tunneling for Field Effect Transistors
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We present silicon-compatible trigated p-Ge/i-Si/n-Si axial heteronanowire tunneling field-effect transistors (TFETs), where on-state tunneling occurs in the Ge drain section, while off-state leakage is dominated by the Si junction in the source. Our TFETs have high I(ON) ~ 2 μA/μm, fully suppressed ambipolarity, and a subthreshold slope SS ~ 140 mV/decade over 4 decades of current with lowest ...
متن کاملCrack Tunneling: Effect of Stress Constraint
* Corresponding author; Email: [email protected] ABSTRACT Crack tunneling is a crack growth feature often seen in stable tearing crack growth tests on specimens made of ductile materials and containing through-thickness cracks with initially straight crack fronts. As a specimen is loaded monotonically, the mid-section of the crack front will advance first, which will be followed by crack growth ...
متن کاملOptofluidic refractometer using resonant optical tunneling effect.
This paper presents the design and analysis of a liquid refractive index sensor that utilizes a unique physical mechanism of resonant optical tunneling effect (ROTE). The sensor consists of two hemicylindrical prisms, two air gaps, and a microfluidic channel. All parts can be microfabricated using an optical resin NOA81. Theoretical study shows that this ROTE sensor has extremely sharp transmis...
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ژورنال
عنوان ژورنال: TEION KOGAKU (Journal of Cryogenics and Superconductivity Society of Japan)
سال: 1968
ISSN: 0389-2441,1880-0408
DOI: 10.2221/jcsj.3.27